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SMALL-SIGNAL TRANSISTOR
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1235AC1 ISA1602AM1 is super mini package resin sealed silicon PNP epitaxial type transistor. These are designed for low frequency voltage amplify application . ISA1235AC1
2.5 1.5
OUTLINE DRAWING ISA1602AM1
2.1 0.425 1.2 0.425 0.4 2.0 1.3 0.65 0.65
UNITmm
0.5
0.5
2.9 1.9 0.95 0.95
FEATURE
Excellent linearity of DC forward current gain. Small collector to emitter saturation voltage VCE(sat)=-0.3Vmax

0.16
APPLICATION
For small type machine low frequency voltage amplify application.
0.8
00.1
JEITASC-59 JEDECTO-236 resemblance TERMINAL CONNECTOR BASE EMITTER COLLECTOR
0.7
00.1
JEITASC-70 JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR
MAXIMUM RATINGSTa=25
Symbol Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings ISA1235AC1 ISA1602AM1 -60 -6 -50 -200 200 +150 -55+150 UNIT V V V mA mW
MARKING
. MF
hFE ITEM
ELECTRICAL CHARACTERISTICSTa=25
Symbol E * Cob NF Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain bandwidth product Collector output capacitance Noise Figure Test conditions I C=-100ARBE= VCB=-60VI E =0 VEB=-6VI C =0 VCE=-6VI C =-1mA VCE=-6VI C =-0.1mA I C =-100mAI B =-10mA VCE=-6VI E =10mA VCB=-6VI E =0,f=1MHz VCE=-6VI E =0.3mA f=100HzRG=10k Min -50 Limits Ave Max -0.1 -0.1 500 -0.3 200 4.0 20 E 150300 UNIT V A A V MHz pF dB F 250500
150 90
*It shows hFE classification in below table. FE
ISAHAYA ELECTRONICS CORPORATION
0.15
1.1
0.9
0.3
SMALL-SIGNAL TRANSISTOR
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT 50 IB=0.20mA
COMMON EMITTER TRANSFER
-50
IB=0.18mA IB=0.16mA IB=0.14mA IB=0.12mA IB=0.10mA
VCE=-6V
40
COLLECTOR CURRENT IC(mA)
-40
COLLECTOR CURRENT IC[mA]
5
30
IB=0.08mA IB=0.06mA
-30
20 IB=0.04mA 10
-20
IB=0.02mA
-10
IB=0 0 0 1 2 3 4 COLLECTOREMITTER VOLTAGE VCE(V)
-0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0
BASE TO EMITTER VOLTAGE VBE[V]
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
1000
DC FORWARD CURRENT GAIN hFE
GAIN BAND WIDTH PRODUCT fT[MHz]
400
VCE=-6V 100(@IC--1mA)
VCE=-6V 300
100
200
100
10 -0.1
0
-1
-10
-100
-1000
0.1
1
10
100
COLLECTOR CURRENT IC[mA]
EMITTER CURRENT IE[mA]
COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE
COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
250
COLLECTOR DISSIPATION Pc[mW]
200
10
150
100
1
50
0 -0.1
0
-1 -10 -100
0
50
100
150
COLLECTOR TO BASE VOLTAGE VCB[V]
AMBIENT TEMPERATURE Ta[]
ISAHAYA ELECTRONICS CORPORATION
SMALL-SIGNAL TRANSISTOR
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
Jan.2007

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